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参数资料
型号： M29DW128F60NF1
厂商： 意法半导体
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
文件页数： 1/93页
文件大小： 719K
代理商： M29DW128F60NF1
PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/93
August 2005
1
M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V Supply, Flash Memory
Features summary
■
Supply Voltage
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
– V
CCQ
= 1.65V to 3.6V for Input/Output
– V
PP
=12V for Fast Program (optional)
■
ASYNCHRONOUS RANDOM/PAGE READ
– Page Width: 8 Words
– Page Access: 25, 30ns
– Random Access: 60, 70ns
■
PROGRAMMING TIME
– 10μs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
■
ERASE VERIFY
■
MEMORY BLOCKS
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
■
DUAL OPERATIONS
– While Program or Erase in one bank, Read
in any of the other banks
■
PROGRAM/ ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM
– Faster Production/Batch Programming
■
COMMON FLASH INTERFACE
– 64 bit Security Code
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
HARDWARE BLOCK PROTECTION
– V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
■
SECURITY FEATURES
– Standard Protection
– Password Protection
■
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
■
ECOPACK
PACKAGES AVAILABLE
BGA
TSOP56 (NF)
14 x 20mm
TBGA64 (ZA)
10 x 13mm
相关PDF资料
PDF描述
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相关代理商/技术参数
参数描述
M29DW128F60NF1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:闪存 128 Mbit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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