参数资料
型号: M29DW128F60NF1
厂商: 意法半导体
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,页,引导块)3V电源,快闪记忆体
文件页数: 16/93页
文件大小: 719K
代理商: M29DW128F60NF1
2 Signal descriptions
M29DW128F
16/93
Holding RP at V
ID
will temporarily unprotect all the blocks previously protected using a High
Voltage Block Protection technique. Program and erase operations on all blocks will be
possible. The transition from V
IH
to V
ID
must be slower than t
PHPHH
.
2.10 Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or erase operation. During Program or erase operations Ready/Busy is
Low, V
OL
. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase
Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See
Table 30: Reset/Block Temporary Unprotect AC Characteristics
and
Figure 18
and
Figure 19
.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11 Byte/Word Organization Select (BYTE)
It is used to switch between the x8 and x16 Bus modes of the memory when the M29DW128F
is delivered in TSOP56 package. When Byte/Word Organization Select is Low, V
IL
, the memory
is in x8 mode, when it is High, V
IH
, the memory is in x16 mode.
2.12 V
CCQ
Supply Voltage
V
CCQ
provides the power supply to the I/O and control pins and enables all Outputs to be
powered independently from V
CC
. V
CCQ
can be tied to V
CC
or can use a separate supply.
2.13 V
CC
Supply Voltage (2.7V to 3.6V)
V
CC
provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout
Voltage, V
LKO
. This prevents Bus Write operations from accidentally damaging the data during
power up, power down and power surges. If the Program/Erase Controller is programming or
erasing during this time then the operation aborts and the memory contents being altered will
be invalid.
A 0.1μF capacitor should be connected between the V
CC
Supply Voltage pin and the V
SS
Ground pin to decouple the current surges from the power supply. The PCB track widths must
be sufficient to carry the currents required during Program and erase operations, I
CC2
.
2.14 V
SS
Ground
V
SS
is the reference for all voltage measurements. The device features two V
SS
pins both of
which must be connected to the system ground.
相关PDF资料
PDF描述
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相关代理商/技术参数
参数描述
M29DW128F60NF1E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:闪存 128 Mbit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel