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参数资料
| 型号： | M29F002BB45K1 |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，启动座单电源闪存 |
| 文件页数： | 12/22页 |
| 文件大小： | 189K |
| 代理商： | M29F002BB45K1 |
M29F002BT, M29F002BB, M29F002BNT, M29F002BNB
12/22
Table 11. DC Characteristics
(T
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C)
Note: 1. Excluding the RP input.
2. Sampled only, not 100% tested.
3. T
A
= 25°C, V
CC
= 5V.
Symbol
Parameter
Test Condition
Min
Typ
(3)
Max
Unit
I
LI(1)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LR1
RP Leakage Current High
RP = V
CC
±1
μA
I
LR2
RP Leakage Current Low
RP = V
SS
–0.2
–10
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
,
f = 6MHz
5
15
mA
I
CC2
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC3
Supply Current (Standby) CMOS
E = V
CC
±0.2V,
RP = V
CC
±0.2V
30
100
μA
I
CC4
(2)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45
V
V
OH
Output High Voltage TTL
I
OH
= –12.5mA
2.4
V
Output High Voltage CMOS
I
OH
= –100μA
V
CC
–0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(2)
Program/Erase Lockout Supply
Voltage
3.2
4.2
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F002BB45K1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB45K3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB45K3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB45K6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M29F002BB45K6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
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