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参数资料
| 型号： | M306N4MCT-XXXFP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100 |
| 文件页数： | 90/92页 |
| 文件大小： | 694K |
| 代理商： | M306N4MCT-XXXFP |
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REVISION HISTORY
M16C/6N Group (M16C/6N4) Data Sheet
Rev.
Date
Description
Page
Summary
A-2
34
Table 5.6 A/D Conversion Characteristics: "Tolerance Level Impedance" is added.
35
Table 5.8 Power Supply Circuit Timing Characteristics: "td(M-L)" is deleted.
Figure 5.2 Power Supply Circuit Timing Diagram is added.
36
Table 5.10 Memory Expansion Mode and Microprocessor Mode: "td(BCLK-HLDA)" is deleted.
38
Table 5.21 Serial I/O: Min. of standard in tsu(D-C) is revised from "30" to "70".
39
Table 5.23 Memory Expansion Mode and Microprocessor Mode (for setting with no wait)
Max. of Standard in td(BCLK-ALE) is revised from "25" to "15".
td(BCLK-HLDA) is added.
40
Table 5.24 Memory Expansion Mode and Microprocessor Mode (for 1- to 3-wait setting
and external area access)
Max. of Standard in td(BCLK-ALE) is revised from "25" to "15".
td(BCLK-HLDA) is added.
41
Table 5.25 Memory Expansion Mode and Microprocessor Mode (for 2- to 3-wait setting,
external area access and multiplexed bus selection)
td(BCLK-HLDA) is added.
Max. of Standard in td(BCLK-ALE) is revised from "25" to "15".
42
Figure 5.4 Timing Diagram (1): "XIN input" is added.
44, 45
Figures 5.6 and 5.7 Timing Diagram (3) (4): "DB" in Read timing is revised to "DBi".
46, 47
Figures 5.8 and 5.9 Timing Diagram (5) (6): "DB" in Write timing is revised to "DBi".
49
Figure 5.11 Timing Diagram (8)
"ADi/DB" in Read/Write timing is revised to "ADi/DBi".
50
Appendix 1. Package Dimensions: 100P6Q-A is added.
–
Revised edition issued
* The contents of product are revised. (Normal-ver. is added.)
* Revised parts and revised contents are as follows (except for expressional change).
2
Table 1.1 Performance outline of M16C/6N Group (M16C/6N4)
Performance outline of Normal-ver. is added.
4
Table 1.2 Product List is revised. (Normal-ver. is added.)
Figure 1.2 Type No., Memory Size, and Package:
"(no): Normal-ver." is added to Characteristics.
19
Figure 4.7 SFR Information (7): NOTE 1 is revised.
32
Table 5.4 Electrical Characteristics (1)
Measuring Condition of VOL is revised from “LOL = –200A” to “LOL = 200A”.
33
Table 5.5 Electrical Characteristics (2): Mask ROM (5th item)
“f(XCIN)” is changed to “(f(BCLK)).
34
Table 5.6 A/D Conversion Characteristics: “Tolerance Level Impedance” is deleted.
–
Revised edition issued
* Electric Characteristics of Normal-ver. is added.
* Revised parts and revised contents are as follows (except for expressional change).
1
1.1 Applications: Comment of Normal-ver. is added.
4
Table 1.2 Product Information
Status of development is revised and NOTES 1 and 2 are added.
2.00 Nov. 10, 2004
2.10 Jun. 24, 2005
2.40 Aug. 25, 2006
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相关代理商/技术参数 |
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|---|---|
| M306N4MCT-XXXGP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Renesas MCU |
| M306N4MCV-XXXFP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Renesas MCU |
| M306N4MCV-XXXGP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Renesas MCU |
| M306N4MC-XXXGP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Renesas MCU |
| M306N4MGT-XXXFP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Renesas MCU |
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