参数资料
型号: M312L2923BTS-CAA
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Registered Module
中文描述: DDR SDRAM的注册模块
文件页数: 14/23页
文件大小: 258K
代理商: M312L2923BTS-CAA
DDR SDRAM
512MB, 1GB, 2GB TSOP Registered DIMM
Revison 1.0 December, 2003
Parameter
Symbol
AA
(DDR266@CL=2)
A2
(DDR266@CL=2)
B0
(DDR266@CL=2.5)
A0
(DDR200@CL=2)
Unit
Note
Min
Max
Mn
Max
Min
Max
Min
Max
Mode register set cycle time
tMRD
15
15
15
16
ns
DQ & DM setup time to DQS
tDS
0.5
0.5
0.5
0.6
ns
j, k
DQ & DM hold time to DQS
tDH
0.5
0.5
0.5
0.6
ns
j, k
Control & Address input pulse width
tIPW
2.2
2.2
2.2
2.5
ns
8
DQ & DM input pulse width
tDIPW
1.75
1.75
1.75
2
ns
8
Power down exit time
tPDEX
7.5
7.5
7.5
10
ns
Exit self refresh to non-Read command
tXSNR
75
75
75
80
ns
Exit self refresh to read command
tXSRD
200
200
200
200
tCK
Refresh interval time
tREFI
7.8
7.8
7.8
7.8
us
4
Output DQS valid window
tQH
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
ns
11
Clock half period
tHP
tCLmn
or tCHmn
-
tCLmn
or tCHmn
-
tCLmn
or tCHmn
-
tCLmn
or tCHmn
-
ns
10, 11
Data hold skew factor
tQHS
0.75
0.75
0.75
0.8
ns
11
DQS write postamble time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
2
Active to Read with Auto precharge
command
tRAP
20
20
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tWR/tCK)
+
(tWR/tCK)
+
(tWR/tCK)
+
tCK
13
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR266 & DDR200 devices to ensure proper sys-
tem performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 :
Input Slew Rate for DQ, DQS, and DM
Table 2
:
Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
AC CHARACTERISTICS
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
0.5
4.0
V/ns
a, m
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
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