参数资料
型号: M34D64-WMN6T
厂商: 意法半导体
元件分类: DRAM
英文描述: 64 Kbit Serial I2C Bus EEPROM With Hardware Write Control on Top Quarter of Memory
中文描述: 64千位串行I2C总线的EEPROM,带有硬件写控制记忆的热门季
文件页数: 12/21页
文件大小: 147K
代理商: M34D64-WMN6T
M34D64
12/21
Table 9. AC Measurement Conditions
Figure 10. AC Measurement I/O Waveform
Table 10. Input Parameters
Note: 1. T
A
= 25 °C, f = 400 kHz
2. Sampled only, not 100% tested.
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Levels
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Levels
0.3V
CC
to 0.7V
CC
V
Symbol
Parameter
1,2
Test Condition
Min
.
Max
.
Unit
C
IN
Input Capacitance (SDA)
8
pF
C
IN
Input Capacitance (other pins)
6
pF
Z
WCL
WC Input Impedance
V
IN
< 0.5 V
50
300
k
Z
WCH
WC Input Impedance
V
IN
> 0.7V
CC
500
k
t
NS
Pulse width ignored
(Input Filter on SCL and SDA)
Single glitch
100
ns
AI00825B
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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