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参数资料
| 型号： | M366S3354BTS |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP 68UF 16V ELECT KZE RAD |
| 中文描述： | 内存缓冲模块168线缓冲模块基于512Mb乙芯片62/72-bit非ECC / ECC的 |
| 文件页数： | 13/22页 |
| 文件大小： | 379K |
| 代理商： | M366S3354BTS |
256MB, 512MB, 1GB Unbuffered DIMM
DC CHARACTERISTICS
Rev. 1.1 February 2004
SDRAM
M374S6553ETS (64M x 72, 512MB Module)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
810
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
18
18
mA
Precharge standby current
in non power-down mode
I
CC2
N
180
mA
I
CC2
NS
90
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
55
55
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
270
mA
I
CC3
NS
225
mA
Operating current
(Burst mode)
I
CC4
900
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
1,800
27
mA
mA
2
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
960
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
32
32
mA
Precharge standby current
in non power-down mode
I
CC2
N
320
mA
I
CC2
NS
160
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
100
100
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
480
mA
I
CC3
NS
400
mA
Operating current
(Burst mode)
I
CC4
1,040
mA
1
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
I
CC5
I
CC6
1,840
48
mA
mA
2
M366S2953BTS (128M x 64, 1GB Module)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S3354BTS-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC |
| M366S3953MTS-C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S6453AT0-C1H00 | 制造商:Samsung SDI 功能描述:64M X 64 SDRAM DIMM based on 32M X 8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
| M366S6453CTS | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S6453CTS-L1H/C1H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
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