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参数资料
| 型号： | M36L0T7050T0 |
| 厂商： | 意法半导体 |
| 英文描述： | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| 中文描述： | 128Mbit（多银行，多层次，突发）闪存32兆（2米× 16）移动存储芯片，多芯片封装 |
| 文件页数： | 1/18页 |
| 文件大小： | 361K |
| 代理商： | M36L0T7050T0 |
1/18
December 2004
M36L0T7050T0
M36L0T7050B0
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
32Mbit (2M x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY
■
MULTI-CHIP PACKAGE
–
1 die of 128Mbit (8Mx16, Multiple Bank,
Multi-level, Burst) Flash Memory
–
1 die of 32Mbit (2Mx16) Pseudo SRAM
■
SUPPLY VOLTAGE
–VDDF = 1.7 to 2V
–VDDP = VDDQ = 2.7 to 3.3V
–VPP = 9V for fast program (12V tolerant)
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Device Code (Top Flash Configuration)
M36L0T7050T0: 88C4h
–
Device Code (Bottom Flash
Configuration) M36L0T7050B0: 88C5h
■
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
FLASH MEMORY
■
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 50MHz
–
Asynchronous Page Read mode
–
Random Access: 90ns
■
SYNCHRONOUS BURST READ SUSPEND
■
PROGRAMMING TIME
–
10s typical Word program time using
Write to Buffer and Program
■
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 8 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
■
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
■
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
Figure 1. Package
■
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–WP for Block Lock-Down
–
Absolute Write Protection with VPP = VSS
■
COMMON FLASH INTERFACE (CFI)
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■
ACCESS TIME: 70ns
■
LOW STANDBY CURRENT: 100A
■
DEEP POWER-DOWN CURRENT: 10A
■
BYTE CONTROL: UBP/LBP
■
PROGRAMMABLE PARTIAL ARRAY
■
8 WORD PAGE ACCESS CAPABILITY: 18ns
■
POWER-DOWN MODES
– Deep Power-Down
– 4 Mbit Partial Array Refresh
– 8 Mbit Partial Array Refresh
– 16 Mbit Partial Array Refresh
TFBGA88 (ZAQ)
8 x 10mm
FBGA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M36L0T7050T0ZAQE | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T0ZAQF | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T0ZAQT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2ZAQ | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
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