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参数资料
型号： M36L0T7050T0
厂商： 意法半导体
英文描述： 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
中文描述： 128Mbit（多银行，多层次，突发）闪存32兆（2米× 16）移动存储芯片，多芯片封装
文件页数： 15/18页
文件大小： 361K
代理商： M36L0T7050T0
M36L0T7050T0, M36L0T7050B0
6/18
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram and Table 1., Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A22). Addresses
A0-A20
are common inputs for the Flash Memory and the
PSRAM components. The other lines (A21-A22)
are inputs for the Flash Memory component only.
The Address Inputs select the cells in the memory
array to access during Bus Read operations. Dur-
ing Bus Write operations they control the com-
mands sent to the Command Interface of the Flash
memory Program/Erase Controller or they select
the cells to access in the PSRAM.
The Flash memory component is accessed
through the Chip Enable signal (EF) and through
the Write Enable (WF) signal, while the PSRAM is
accessed through two Chip Enable signals (E1P
and E2P) and the Write Enable signal (WP).
Data Input/Output (DQ0-DQ15). In
the
Flash
memory the Data I/O output the data stored at the
selected address during a Bus Read operation or
input a command or the data to be programmed
during a Write Bus operation.
In the PSRAM the Upper Byte Data Inputs/Out-
puts, DQ8-DQ15, carry the data to or from the up-
per part of the selected address during a Write or
Read operation, when Upper Byte Enable (UBP) is
driven Low.
The Lower Byte Data Inputs/Outputs, DQ0-DQ7,
carry the data to or from the lower part of the se-
lected address during a Write or Read operation,
when Lower Byte Enable (LBP) is driven Low.
Flash Chip Enable (EF). The Chip Enable input
activates the memory control logic, input buffers,
decoders and sense amplifiers. When Chip En-
able is Low, VIL, and Reset is High, VIH, the device
is in active mode. When Chip Enable is at VIH the
Flash memory is deselected, the outputs are high
impedance and the power consumption is reduced
to the standby level.
Flash Output Enable (GF). The Output Enable
input controls data output during Flash memory
Bus Read operations.
Flash Write Enable (WF). The
Write
Enable
controls the Bus Write operation of the Flash
memories’ Command Interface. The data and ad-
dress inputs are latched on the rising edge of Chip
Enable or Write Enable whichever occurs first.
Flash Write Protect (WPF). Write Protect is an
input that gives an additional hardware protection
for each block. When Write Protect is Low, VIL,
Lock-Down is enabled and the protection status of
the Locked-Down blocks cannot be changed.
When Write Protect is at High, VIH, Lock-Down is
disabled and the Locked-Down blocks can be
locked or unlocked. (See the Lock Status Table in
the M30L0T7000T0 datasheet).
Flash Reset (RPF). The Reset input provides a
hardware reset of the memory. When Reset is at
VIL, the memory is in Reset mode: the outputs are
high impedance and the current consumption is
reduced to the Reset Supply Current IDD2. Refer to
Table 7., Flash DC Characteristics - Currents, for
the value of IDD2. After Reset all blocks are in the
Locked state and the Configuration Register is re-
set. When Reset is at VIH, the device is in normal
operation. Exiting Reset mode the device enters
Asynchronous Read mode, but a negative transi-
tion of Chip Enable or Latch Enable is required to
ensure valid data outputs.
The Reset pin can be interfaced with 3V logic with-
out any additional circuitry. It can be tied to VRPH
(refer to Table 8., Flash Memory DC Characteris-
tics - Voltages).
Flash Latch Enable (LF). Latch Enable latches
the address bits on its rising edge. The address
latch is transparent when Latch Enable is Low, VIL,
and it is inhibited when Latch Enable is High, VIH.
Latch Enable can be kept Low (also at board level)
when the Latch Enable function is not required or
supported.
Flash Clock (KF). The Clock input synchronizes
the Flash memory to the microcontroller during
synchronous read operations; the address is
latched on a Clock edge (rising or falling, accord-
ing to the configuration settings) when Latch En-
able is at VIL. Clock is don't care during
Asynchronous Read and in write operations.
Flash Wait (WAITF). WAIT is a Flash output sig-
nal used during Synchronous Read to indicate
whether the data on the output bus are valid. This
output is high impedance when Flash Chip Enable
is at VIH or Flash Reset is at VIL. It can be config-
ured to be active during the wait cycle or one clock
cycle in advance. The WAITF signal is not gated
by Output Enable.
Chip Enable (E1P). When asserted (Low), the
Chip Enable, E1P, activates the memory state ma-
chine, address buffers and decoders, allowing
Read and Write operations to be performed. When
de-asserted (High), all other pins are ignored, and
the device is put, automatically, in low-power
Standby mode.
Chip Enable (E2P). The Chip Enable, E2P, puts
the device in Power-down mode (Deep Power-
Down, PAR and Standby) when it is driven Low.
One of these, Deep Power-Down mode, is the low-
est power mode.
Output Enable (GP). The Output Enable, GP,
provides a high speed tri-state control, allowing
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M36L0T7050T0ZAQE 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
M36L0T7050T0ZAQF 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
M36L0T7050T0ZAQT 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
M36L0T7050T2 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
M36L0T7050T2ZAQ 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
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