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参数资料
| 型号： | M38513E4SS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, OTPROM, 4 MHz, MICROCONTROLLER, CDIP42 |
| 封装： | 0.600 INCH, METAL SEALED, DIP-42 |
| 文件页数： | 44/91页 |
| 文件大小： | 1295K |
| 代理商： | M38513E4SS |
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49
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
3851 Group
(Built-in 24 KB or more ROM)
Table 15 Summary of M38517F8 (flash memory version)
FLASH MEMORY MODE
The M38517F8 (flash memory version) has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when VCC is 5 V, and 2 power sources
when VPP is 5 V and VCC is 3.0-5.5 V in the CPU rewrite and stan-
dard serial I/O modes.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 15 lists the summary of the M38517F8 (flash memory ver-
sion).
The flash memory of the M38517F8 is divided into User ROM area
and Boot ROM area as shown in Figure 57.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Item
Power source voltage
VPP voltage (For Program/Erase)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
Vcc = 2.7– 5.5 V (Note 1)
Vcc = 2.7–3.6 V (Note 2)
4.5-5.5 V
3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)
1 block (32 Kbytes)
1 block (4 Kbytes) (Note 3)
Byte program
Batch erasing
Program/Erase control by software command
6 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1: The power source voltage must be Vcc = 4.5–5.5 V at program and erase operation.
2: The power source voltage can be Vcc = 3.0–3.6 V also at program and erase operation.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
rewritten in only parallel I/O mode.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M38514E6FP | 制造商:Renesas Electronics Corporation 功能描述:SLIM740 OTP 24K/640B RAM, W/A-D, I2C, L - Rail/Tube |
| M38514E6SP | 制造商:Renesas Electronics Corporation 功能描述:SLIM740 OTP 24K/640B RAM, W/A-D, I2C, L - Rail/Tube |
| M38517T-ADS | 功能描述:DEV TMP TRGT BRD FOR M38517RSS & RoHS:否 类别:编程器，开发系统 >> 配件 系列:- 标准包装:1 系列:- 附件类型:适配器板 适用于相关产品:RCB230，RCB231，RCB212 配用:26790D-ND - RCB BREAKOUT BOARD RS232 CABLE |
| M38517T-PAC | 功能描述:DEV SIMPLE TOOL EMULATOR FOR M38 RoHS:否 类别:编程器，开发系统 >> 内电路编程器、仿真器以及调试器 系列:- 产品变化通告:Development Systems Discontinuation 19/Jul/2010 标准包装:1 系列:* 类型:* 适用于相关产品:* 所含物品:* |
| M3852 BK001 | 制造商:Alpha Wire 功能描述:CBL 8COND 14AWG BLK 1000' |
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