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参数资料
| 型号： | M41ST85YMX6TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, SOIC-28 |
| 文件页数： | 4/34页 |
| 文件大小： | 532K |
| 代理商： | M41ST85YMX6TR |
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M41ST85Y, M41ST85W
12/34
Data Retention Mode
With valid VCC applied, the M41ST85Y/W can be
accessed as described above with READ or
WRITE Cycles. Should the supply voltage decay,
the M41ST85Y/W will automatically deselect,
write protecting itself (and any external SRAM)
when
VCC
falls
between
VPFD(max)
and
VPFD(min). This is accomplished by internally in-
hibiting access to the clock registers. At this time,
the Reset pin (RST) is driven active and will re-
main active until VCC returns to nominal levels. Ex-
ternal RAM access is inhibited in a similar manner
by forcing ECON to a high level. This level is within
0.2 volts of the VBAT. ECON will remain at this level
as long as VCC remains at an out-of-tolerance con-
dition. When VCC falls below the Battery Back-up
Switchover Voltage (VSO), power input is switched
from the VCC pin to the SNAPHAT
battery, and
the clock registers and external SRAM are main-
tained from the attached battery supply.
All outputs become high impedance. The VOUT pin
is capable of supplying 100 A of current to the at-
tached memory with less than 0.3 volts drop under
this condition. On power up, when VCC returns to
a nominal value, write protection continues for trec
by inhibiting ECON. The RST signal also remains
active during this time (see Figure 22., page 27).
Note: Most low power SRAMs on the market to-
day can be used with the M41ST85Y/W RTC SU-
PERVISOR. There are, however some criteria
which should be used in making the final choice of
an SRAM to use. The SRAM must be designed in
a way where the chip enable input disables all oth-
er inputs to the SRAM. This allows inputs to the
M41ST85Y/W and SRAMs to be “Don’t Care”
once VCC falls below VPFD(min). The SRAM
should also guarantee data retention down to
VCC=2.0 volts. The chip enable access time must
be sufficient to meet the system needs with the
chip enable output propagation delays included. If
the SRAM includes a second chip enable pin (E2),
this pin should be tied to VOUT.
If data retention lifetime is a critical parameter for
the system, it is important to review the data reten-
tion
current
specifications
for
the
particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0 volts. Manufacturers
generally specify a typical condition for room tem-
perature along with a worst case condition (gener-
ally at elevated temperatures). The system level
requirements will determine the choice of which
value to use. The data retention current value of
the SRAMs can then be added to the IBAT value of
the M41ST85Y/W to determine the total current re-
quirements for data retention. The available bat-
tery capacity for the SNAPHAT of your choice
can then be divided by this current to determine
the amount of data retention available (see Table
For a further more detailed review of lifetime calcu-
lations, please see Application Note AN1012.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M41ST85YSH | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
| M41ST87W | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0, 3.3, or 3.0V, 1280 bit (160 x8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
| M41ST87W_11 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM |
| M41ST87WMX6 | 功能描述:实时时钟 Serial 1280 (160x8) RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| M41ST87WMX6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM |
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