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参数资料
| 型号： | M470L3224BTO |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256MB DDR SDRAM MODULE |
| 中文描述： | 256MB的DDR内存模块 |
| 文件页数： | 10/20页 |
| 文件大小： | 264K |
| 代理商： | M470L3224BTO |
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
Revision 1.2 Oct. 2004
M485L1624FU0 (16M x 72, 128MB Module)
(V
DD
=2.7V, T
= 10
°
C
)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
B3(DDR333@CL=2.5)
810
1,035
27
225
180
315
495
1,260
1,440
1,530
27
14
2,340
A2(DDR266@CL=2)
720
900
27
180
162
270
405
1,080
1,215
1,440
27
14
2,160
B0(DDR266@CL=2.5)
720
900
27
180
162
270
405
1,080
1,215
1,440
27
14
2,160
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
IDD6
Normal
Low power
IDD7A
Optional
相关PDF资料 |
PDF描述 |
|---|---|
| M470L1624FU0-CA2 | DDR SDRAM SODIMM |
| M470L3224FU0-CA2 | Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25" |
| M485L1624FU0-CA2 | Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45" |
| M470L1624FU0-CB0 | Split Core Ferrite Bead; Inner Diameter:0.45"; Package/Case:Split Ferrite Core; External Width:0.93"; Frequency:100MHz; Impedance:238ohm; Latch Height:0.38"; Mounting Type:Surface Mount; Width (Latch Included):1.035" RoHS Compliant: Yes |
| M470L3224FU0-CB0 | DDR SDRAM SODIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L3224DT0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
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