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参数资料
| 型号： | M470L3224FU0-CA2 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25" |
| 中文描述： | 的DDR SDRAM SODIMM |
| 文件页数： | 8/20页 |
| 文件大小： | 264K |
| 代理商： | M470L3224FU0-CA2 |
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
Revision 1.2 Oct. 2004
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.5 * # of component
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
Power & DC Operating Conditions (SSTL_2 In/Out)
Notes
1. Includes
±
25mV margin for DC offset on V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on V
REF
,
bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V
REF
and internal DRAM noise coupled
TO V
REF
, both of which may result in V
REF
noise. V
REF
should be de-coupled with an inductance of
≤
3nH.
2.V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
5
I/O Supply voltage
V
DDQ
2.3
2.7
V
5
I/O Reference voltage
V
REF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.36
V
DDQ
+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver) ;V
OUT
=
V
TT
+ 0.84V
Output High Current(Normal strengh driver) ;V
OUT
=
V
TT
- 0.84V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
+ 0.45V
I
OH
-16.8
mA
I
OL
16.8
mA
I
OH
-9
mA
相关PDF资料 |
PDF描述 |
|---|---|
| M485L1624FU0-CA2 | Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45" |
| M470L1624FU0-CB0 | Split Core Ferrite Bead; Inner Diameter:0.45"; Package/Case:Split Ferrite Core; External Width:0.93"; Frequency:100MHz; Impedance:238ohm; Latch Height:0.38"; Mounting Type:Surface Mount; Width (Latch Included):1.035" RoHS Compliant: Yes |
| M470L3224FU0-CB0 | DDR SDRAM SODIMM |
| M470L1624FU0-CB3 | DDR SDRAM SODIMM |
| M470L3224FU0-CB3 | DDR SDRAM SODIMM |
相关代理商/技术参数 |
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|---|---|
| M470L3224FU0-CB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
| M470L3224FU0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM SODIMM |
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