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参数资料
| 型号： | M470L6524CU0-CB3 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| 中文描述： | DDR SDRAM的缓冲模块18 4针缓冲模块的基于C的512Mb芯片 |
| 文件页数： | 4/17页 |
| 文件大小： | 225K |
| 代理商： | M470L6524CU0-CB3 |
DDR SDRAM
256MB, 512MB Unbuffered SODIMM
Rev. 1.2 June 2005
CC(DDR400@CL=3)
-
166MHz
200MHz
3-3-3
B3(DDR333@CL=2.5)
133MHz
166MHz
-
2.5-3-3
A2(DDR266@CL=2)
133MHz
133MHz
-
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
-
2.5-3-3
Speed @CL2
Speed @CL2.5
Speed @CL3
CL-tRCD-tRP
200Pin Unbuffered SODIMM based on 512Mb C-die (x8, x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
SSTL_2 Interface
66pin TSOP II
Pb-Free
package
RoHS compliant
1.0 Ordering Information
2.0 Operating Frequencies
Part Number
Density
256MB
512MB
Organization
32M x 64
64M x 64
Component Composition
32Mx16 (K4H511638C) * 4EA
32Mx16 (K4H511638C) * 8EA
Height
1,250mil
1,250mil
M470L3324CU0-C(L)CC/B3/A2/B0
M470L6524CU0-C(L)CC/B3/A2/B0
3.0 Feature
相关PDF资料 |
PDF描述 |
|---|---|
| M470L3324CU0-CCC | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L6524CU0-CCC | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L3324CU0-LA2 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L6524CU0-LA2 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L3324CU0-LB0 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L6524CU0-CB300 | 制造商:Samsung Semiconductor 功能描述:512 DDR SDRAM MODUL X64 TSOP2-400(LF) - Trays |
| M470L6524CU0-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L6524CU0-LA2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L6524CU0-LB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L6524CU0-LB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
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