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参数资料
| 型号： | M470T3354CZ0-E6 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM |
| 中文描述： | 无缓冲DDR2内存的SODIMM |
| 文件页数： | 4/20页 |
| 文件大小： | 270K |
| 代理商： | M470T3354CZ0-E6 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Input/Output Functional Description
Symbol
Type
Function
CK0-CK1
CK0-CK1
Input
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge
of CK and falling edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output
timing for read operations is synchronized to the input clock.
CKE0-CKE1
Input
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivat-
ing the clocks, CKE low initiates the Power Down mode or the Self Refesh mode.
S0-S1
Input
Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder
when high. When the command decoder is disabled, new commands are ignored but previous operations
continue. Rank 0 is selected by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”.
RAS, CAS, WE
Input
When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE
define the operation to be executed by the SDRAM.
BA0~BA1
Input
Selects which DDR2 SDRAM internal bank is activated.
ODT0~ODT1
Input
Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended
Mode Register Set (EMRS).
A0~A9,
A10/AP,
A11~A13
Input
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the
rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column
address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the
column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle.
If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low,
autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn
to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the state of
BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
DQ0~DQ63
In/Out
Data Input/Output pins.
DM0~DM7
Input
The data write masks, associated with one data byte. In Write mode, DM operates as a byte
mask by allowing input data to be written if it is low but blocks the write operation if it is high. In
Read mode, DM lines have no effect.
DQS0~DQS7
DQS0~DQS7
In/Out
The data strobes, associated with one data byte, sourced with data transfers. In Write mode,
the data strobe is sourced by the controller and is centered in the data window. In Read mode,
the data strobe is sourced by the DDR2 SDRAMs and is sent at the leading edge of the data
window. DQS signals are complements, and timing is relative to the crosspoint of respective
DQS and DQS If the module is to be operated in single ended strobe mode, all DQS signals
must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately.
V
DD
,V
DD
SPD,V
SS
Supply
Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
SDA
In/Out
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be con-
nected to V
DD
to act as a pull up.
SCL
Input
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL
to V
DD
to act as a pull up.
SA0~SA1
Input
Address pins used to select the Serial Presence Detect base address.
TEST
In/Out
The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SO-
DIMMs).
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相关代理商/技术参数 |
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| M470T3354CZ3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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