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参数资料
| 型号： | M470T6554CZ0-CLD5 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| 中文描述： | 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC |
| 文件页数： | 13/18页 |
| 文件大小： | 328K |
| 代理商： | M470T6554CZ0-CLD5 |
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Electrical Characteristics & AC Timing for DDR2-800/667/533/400
(0
°
C < T
OPER
< 95
°
C; V
DDQ
= 1.8V + 0.1V; V
DD
= 1.8V + 0.1V)
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Parameter
Symbol
256Mb
512Mb
1Gb
2Gb
4Gb
Units
Refresh to active/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
°
C
≤
T
CASE
≤
85
°
C
7.8
7.8
7.8
7.8
7.8
μ
s
85
°
C
<
T
CASE
≤
95
°
C
3.9
3.9
3.9
3.9
3.9
μ
s
Speed
DDR2-800(E7)
DDR2-667(E6)
DDR2-533(D5)
DDR2-400(CC)
Units
Bin
(CL - tRCD - tRP)
5 - 5 - 5
5 - 5 - 5
4 - 4 - 4
3 - 3 - 3
Parameter
min
max
min
max
min
max
min
max
tCK, CL=3
5
8
5
8
5
8
5
8
ns
tCK, CL=4
3.75
8
3.75
8
3.75
8
5
8
ns
tCK, CL=5
2.5
8
3
8
3.75
8
-
-
ns
tRCD
12.5
-
15
15
15
ns
tRP
12.5
-
15
15
15
ns
tRC
51.5
-
54
55
55
ns
tRAS
39
70000
39
70000
40
70000
40
70000
ns
Parameter
Symbol
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Units
Notes
min
max
min
max
min
max
min
max
DQ output access time from CK/CK
tAC
- 400
400
-450
+450
-500
+500
-600
+600
ps
DQS output access time from CK/CK
tDQSCK
- 350
350
-400
+400
-450
+450
-500
+500
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL,t
CH)
x
min(tCL,
tCH)
x
min(tCL,
tCH)
x
min(tCL,
tCH)
x
ps
Clock cycle time, CL=x
tCK
2500
8000
3000
8000
3750
8000
5000
8000
ps
DQ and DM input hold time
tDH(base)
125
x
175
x
225
x
275
x
ps
DQ and DM input setup time
tDS(base)
50
x
100
x
100
x
150
x
ps
Control & Address input pulse width for each
input
tIPW
0.6
x
0.6
x
0.6
x
0.6
x
tCK
DQ and DM input pulse width for each input
tDIPW
0.35
x
0.35
x
0.35
x
0.35
x
tCK
Data-out high-impedance time from CK/CK
tHZ
x
tAC max
x
tAC max
x
tAC max
x
tAC max
ps
DQS low-impedance time from CK/CK
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2* tAC
min
tAC max
2*tAC
min
tAC max
2* tACmin tAC max
2* tACmin
tAC max
ps
DQS-DQ skew for DQS and associated DQ
signals
tDQSQ
x
200
x
240
x
300
x
350
ps
DQ hold skew factor
tQHS
x
300
x
340
x
400
x
450
ps
DQ/DQS output hold time from DQS
tQH
tHP -
tQHS
x
tHP -
tQHS
x
tHP -
tQHS
x
tHP -
tQHS
x
ps
Write command to first DQS latching transition tDQSS
- 0.25
0.25
-0.25
0.25
-0.25
0.25
-0.25
0.25
tCK
DQS input high pulse width
tDQSH
0.35
x
0.35
x
0.35
x
0.35
x
tCK
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相关代理商/技术参数 |
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|---|---|
| M470T6554CZ0-CLE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ0-CLE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ0-D5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T6554CZ0-E6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T6554CZ3-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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