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参数资料
| 型号： | M470T6554CZ0-E6 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM |
| 中文描述： | 无缓冲DDR2内存的SODIMM |
| 文件页数： | 12/20页 |
| 文件大小： | 270K |
| 代理商： | M470T6554CZ0-E6 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-2)
(T
A
=0
o
C, VDD= 1.9V)
M470T2953CZ0: 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
667@CL=4
CD6
667@CL=5
CE6
533@CL=4
CD5
400@CL=3
CCC
Unit
Notes
LD6
LE6
LD5
LCC
IDD0
tbd
tbd
1,040
960
960
960
880
mA
IDD1
tbd
tbd
1,120
1,040
1,000
mA
IDD2P
tbd
tbd
160
tbd
160
80
160
80
mA
IDD2Q
tbd
tbd
560
560
480
mA
IDD2N
tbd
tbd
640
560
560
mA
IDD3P-F
tbd
tbd
560
tbd
480
400
480
400
mA
IDD3P-S
tbd
tbd
192
192
192
mA
IDD3N
tbd
tbd
760
tbd
680
640
680
640
mA
IDD4W
tbd
tbd
1,560
tbd
1,320
1,240
1,200
1,160
mA
IDD4R
tbd
tbd
1,560
tbd
1,320
1,160
1,200
1,160
mA
IDD5
tbd
tbd
1,640
1,560
1,520
mA
IDD6
tbd
tbd
128
tbd
128
64
128
64
mA
IDD7
tbd
tbd
2,160
2,080
2,040
mA
Input/Output Capacitance
(V
DD
=1.8V, V
DDQ
=1.8V, T
A
=25
o
C)
Note: DM is internally loaded to match DQ and DQS identically.
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Non-ECC
M470T6554CZ0
M470T3354CZ0
M470T2953CZ0
Input capacitance, CK and CK
CCK
-
32
-
24
-
48
pF
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
CI
-
34
-
34
-
42
Input/output capacitance, DQ, DM, DQS, DQS
CIO(400/533)
-
10
-
6
-
10
CIO(667)
-
9
-
5.5
-
9
相关PDF资料 |
PDF描述 |
|---|---|
| M470T2953CZ0 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-CC | DDR2 Unbuffered SODIMM |
| M470T2953CZ0-CC | Fuses, 15A 250V CERAMIC LEAD |
| M470T3354CZ0-CD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ0-CD6 | DDR2 Unbuffered SODIMM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6554CZ3-CCC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CD5 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CD500 | 制造商:Samsung Semiconductor 功能描述:DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray |
| M470T6554CZ3-CE6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ3-CE7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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