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参数资料
| 型号： | M48T212V-70MH6TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | 0 TIMER(S), REAL TIME CLOCK, PDSO44 |
| 封装： | SNAPHAT, PLASTIC, SO-44 |
| 文件页数： | 17/23页 |
| 文件大小： | 150K |
| 代理商： | M48T212V-70MH6TR |
3/23
M48T212Y, M48T212V
Table 2. Absolute Maximum Ratings (1)
Note: 1. Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260
°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPH AT sockets.
Table 3. Operating Modes
(1)
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Swit chover Voltage. (See Tables 7A and 7B for details).
Table 4. Truth Table for SRAM Bank Select (1)
Note: 1. X = VIH or VIL.
2. VSO = Battery Back-up Swit chover Voltage. (See Tables 7A and 7B for details).
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
0 to 70
°C
TSTG
Storage Temperature (VCC Off, Oscillator Off) SNAPHAT
SOIC
–40 to 85
–55 to 125
°C
TSLD
(2)
Lead Solder Temperature for 10 sec
260
°C
VIO
Input or Output Voltages
–0.3 to VCC +0.3
V
VCC
Supply Voltage
M48T212Y
M48T212V
–0.3 to 7
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Mode
VCC
E
G
W
DQ7-DQ0
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
VIH
X
High-Z
Standby
Write
VIL
X
VIL
DIN
Active
Read
VIL
VIH
DOUT
Active
Read
VIL
VIH
High-Z
Active
Deselect
VSO to VPFD (min)
(2)
X
High-Z
CMOS Standby
Deselect
≤ VSO (2)
X
High-Z
Battery Back-Up
Mode
VCC
EX
A
E1CON
E2CON
Power
Select
4.5V to 5.5V
or
3.0V to 3.6V
Low
High
Active
Low
High
Low
Active
Deselect
High
X
High
Standby
Deselect
VSO to VPFD (min)
(2)
X
High
CMOS Standby
Deselect
≤ VSO (2)
X
High
Battery Back-Up
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T212V-85MH1 | 功能描述:监控电路 SRAM TK 16X8 85ns RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| M48T212V-85MH1E | 功能描述:监控电路 SRAM TK 16X8 85ns RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| M48T212V-85MH1F | 功能描述:监控电路 SRAM TK 16X8 85ns RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| M48T212V-85MH1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER[ CONTROLLER |
| M48T212V-85MH6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5V/3.3V TIMEKEEPER[ CONTROLLER |
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