参数资料
型号: M48T212Y
厂商: 意法半导体
英文描述: 5V/3.3V TIMEKEEPER[ CONTROLLER
中文描述: 5V/3.3V计时[控制器
文件页数: 5/23页
文件大小: 150K
代理商: M48T212Y
5/23
M48T212Y, M48T212V
Table 6. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
Table 7A. DC Characteristics for M48T212V
(T
A
= 0 to 70
°
C; V
CC
= 3V to 3.6V)
Symbol
Parameter
Note: 1. Outputs deselected.
2. RSTIN1 andRSTIN2 internally pulled-up to V
CC
through 100K
resistor. WDI internally pulled-down to V
SS
through 100K
resistor.
3. For IRQ/FT & RST pins (Open Drain).
4. Conditioned outputs (E1
CON
- E2
CON
) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-
rents will reduce battery life.
5. External SRAM must match TIMEKEEPER Controller chip V
CC
specification.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
OUT(2)
Input/Output Capacitance
V
OUT
= 0V
10
pF
Test Condition
Min
Typ
Max
Unit
I
LI(1,2)
Input Leakage Current
0V
V
IN
V
CC
±
1
μ
A
I
LO(1)
Output Leakage Current
0V
V
OUT
V
CC
±
1
μ
A
I
CC
Supply Current
Outputs open
4
10
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
3
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
–0.2
2
mA
I
BAT
Battery Current OSC ON
575
800
nA
Battery Current OSC OFF
100
nA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
Output Low Voltage (open drain)
(3)
I
OL
= 10mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1.0mA
2.4
V
V
OHB(4)
V
OH
Battery Back-up
I
OUT2
= –1.0
μ
A
2.0
3.6
V
I
OUT1(5)
V
OUT
Current (Active)
V
OUT1
> V
CC
–0.3
70
mA
I
OUT2
V
OUT
Current (Battery Back-up)
V
OUT2
> V
BAT
–0.3
100
μ
A
V
PFD
Power-fail Deselect Voltage
2.7
2.9
3.0
V
V
SO
Battery Back-up Switchover Voltage
V
PFD
–100mV
V
V
BAT
Battery Voltage
3.0
V
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