参数资料
型号: M48T35AY-70MH6TR
厂商: STMICROELECTRONICS
元件分类: 时钟/数据恢复及定时提取
英文描述: 0 TIMER(S), REAL TIME CLOCK, PDSO28
封装: 0.330 INCH, PLASTIC, SOH-28
文件页数: 10/25页
文件大小: 510K
代理商: M48T35AY-70MH6TR
M48T35AY, M48T35AV
18/25
Figure 15. Power Down/Up Mode AC Waveforms
Table 10. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200s after VCC pass-
es VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. trec (min) = 20ms for industrial temperature Grade 6 device.
Table 11. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. All voltages referenced to VSS.
3. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).
4. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - Grade 6 device).
5. At 25°C, VCC = 0V.
Symbol
Parameter(1)
Min
Max
Unit
tPD
E or W at VIH before Power Down
0s
tF
(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
s
tFB
(3)
VPFD (min) to VSS VCC Fall Time
M48T35AY
10
s
M48T35AV
150
s
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
s
tRB
VSS to VPFD (min) VCC Rise Time
1s
trec
(4)
VPFD (max) to Inputs Recognized
40
200
ms
Symbol
Parameter(1,2)
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage
M48T35AY
4.2
4.35
4.5
V
M48T35AV
2.7
2.9
3.0
V
VSO
Battery Back-up Switchover Voltage
M48T35AY
3.0
V
M48T35AV
VPFD –100mV
V
tDR
(5)
Expected Data Retention Time
Grade 1
10(3)
YEARS
Grade 6
10(4)
YEARS
AI01168C
VCC
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID
(PER CONTROL INPUT)
RECOGNIZED
VPFD (max)
VPFD (min)
VSO
trec
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