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参数资料
| 型号： | M48T35Y-70MH6 |
| 厂商： | 意法半导体 |
| 英文描述： | 256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8计时器 |
| 文件页数： | 13/19页 |
| 文件大小： | 148K |
| 代理商： | M48T35Y-70MH6 |
13/19
M48T35AY, M48T35AV
Figure 11. Crystal Accuracy Across Temperature
AI02124
-80
-60
-100
-40
-20
0
20
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
F= -0.038
F
(T - T
0
)
2
±
10%
ppm
C
2
T
0
= 25
°
C
ppm
°
C
Figure 12. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass ca-
pacitor value of 0.1μF (as shown in Figure 12) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
相关PDF资料 |
PDF描述 |
|---|---|
| M48T37 | 3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T37YSH | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Color:Orange; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| M48T37V-10MH6TR | DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL |
| M48T37V-70MH1TR | DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL |
| M48T37V-70MH6 | DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T35Y-70MH6E | 功能描述:实时时钟 256K (32Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| M48T35Y-70MH6F | 功能描述:实时时钟 256K (32Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| M48T35Y-70MH6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T35Y-70PC1 | 功能描述:实时时钟 256K (32Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| M48T35Y-70PC1 | 制造商:STMicroelectronics 功能描述:SRAM TIMEKEEPER 256K 48T35 DIP28 |
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