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参数资料
| 型号： | M48T559 |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
| 中文描述： | 64千位8KB的x8 SRAM的计时与地址/数据复用 |
| 文件页数： | 13/18页 |
| 文件大小： | 147K |
| 代理商： | M48T559 |
13/18
M48T559Y
BATTERY LOW WARNING
The M48T559Y checks its battery voltage on pow-
er-up. The BL (Battery Low) bit (D4 of 1FF0h) will
be set on power-up if the battery voltage is less
than 2.5V (typical).
POWER-ON DEFAULTS
Upon application of power to the device, the fol-
lowing register bits are set to a ’0’ state: WDS;
BMB0-BMB4; RB0-RB1; AFE; ABE; W; R; FT.
POWER SUPPLY DECOUPLING
and UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
14) is recommended in order to provide the need-
ed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Table 12. Reset AC Characteristics
(T
A
= 0 to 70°C; V
CC
= 4.5V to 5.5V)
Symbol
Parameter
Min
Max
Unit
t
R1
RSTIN1 Low to RST Low
50
200
ns
t
R2
RSTIN2 Low to RST Low
20
100
ms
t
R1HRZ
RSTIN1 High to RST Hi-Z
40
200
ms
t
R2HRZ
RSTIN2 High to RST Hi-Z
40
200
ms
Figure 12. Reset Timing Waveforms
AI01679
RSTIN1
RST
RSTIN2
tR1
tR1HRZ
Hi-Z
tR2
tR2HRZ
Hi-Z
Figure 13. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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| M48T559YMH1 | MOD. CONN, M,RJ-11, 6WIRE |
| M48T559YMH1TR | 6-WIRE COUPLER STRAIGHT-PIN |
| M48T559YMH | 64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
| M48T59-70MH1 | 64 Kbit 8Kb x8 TIMEKEEPER SRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T559Y | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
| M48T559YMH | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
| M48T559YMH1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
| M48T559Y-MH1 | 功能描述:RAM其它 8KX8 TIMEKEEPR RoHS:否 制造商:Freescale Semiconductor 封装:Tray |
| M48T559YMH1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED |
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