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参数资料
型号： M50FW080K1
厂商： 意法半导体
英文描述： 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
中文描述： 8兆1兆× 8，统一座3V电源闪存固件集线器
文件页数： 9/47页
文件大小： 765K
代理商： M50FW080K1
17/47
M50FW080
Chip Erase Command. The Chip Erase Com-
mand can be only used in A/A Mux mode to erase
the entire chip at a time. Erasing should not be at-
tempted when VPP is not at VPPH. The operation
can also be executed if VPP is below VPPH, but re-
sult could be uncertain. Two Bus Write operations
are required to issue the command and start the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits. During the Chip Erase operation the
memory will only accept the Read Status Register
command. All other commands will be ignored.
Typical Chip Erase times are given in Table 14..
The Chip Erase command sets all of the bits in the
memory to ‘1’. See Figure 22., for a suggested
flowchart on using the Chip Erase command.
Block Erase Command. The Block Erase com-
mand can be used to erase a block. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the block address
in the internal state machine and starts the Pro-
gram/Erase Controller. Once the command is is-
sued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the block is protected then the Block Erase oper-
ation will abort, the data in the block will not be
changed and the Status Register will output the er-
ror.
During the Block Erase operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Block
Erase times are given in Table 14..
The Block Erase command sets all of the bits in
the block to ‘1’. All previous data in the block is
lost.
See Figure 22., for a suggested flowchart on using
the Erase command.
Clear Status Register Command. The
Clear
Status Register command can be used to reset
bits 1, 3, 4 and 5 in the Status Register to ‘0’. One
Bus Write is required to issue the Clear Status
Register command. Once the command is issued
the memory returns to its previous mode, subse-
quent Bus Read operations continue to output the
same data.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Program
or Erase command is issued. If an error occurs
then it is essential to clear any error bits in the Sta-
tus Register by issuing the Clear Status Register
command before attempting a new Program or
Erase command.
Program/Erase Suspend Command. The
Pro-
gram/Erase Suspend command can be used to
pause a Program or Block Erase operation. One
Bus Write cycle is required to issue the Program/
Erase Suspend command and pause the Pro-
gram/Erase Controller. Once the command is is-
sued it is necessary to poll the Program/Erase
Controller Status bit to find out when the Program/
Erase Controller has paused; no other commands
will be accepted until the Program/Erase Control-
ler has paused. After the Program/Erase Control-
ler has paused, the memory will continue to output
the Status Register until another command is is-
sued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once Program/Erase Control-
ler Status bit indicates that the Program/Erase
Controller is no longer active, the Program Sus-
pend Status bit or the Erase Suspend Status bit
can be used to determine if the operation has com-
pleted or is suspended. For timing on the delay be-
tween
issuing
the
Program/Erase
Suspend
command and the Program/Erase Controller
pausing see Table 14..
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature and Program/Erase Resume com-
mands will be accepted by the Command Inter-
face. Additionally, if the suspended operation was
Block Erase then the Program command will also
be accepted; only the blocks not being erased may
be read or programmed correctly.
See Figure 21., and Figure 24., for suggested
flowcharts on using the Program/Erase Suspend
command.
Program/Erase Resume Command. The
Pro-
gram/Erase Resume command can be used to re-
start
the
Program/Erase
Controller
after
a
Program/Erase Suspend has paused it. One Bus
Write cycle is required to issue the Program/Erase
Resume command. Once the command is issued
subsequent Bus Read operations read the Status
Register.
相关PDF资料
PDF描述
M50FW080K1G 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080NB5T 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080NB5TG 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M524-012.8M TCVCXO, CLOCK, 12.8 MHz, CMOS OUTPUT
M504-020.0M TCVCXO, CLOCK, 20 MHz, CMOS OUTPUT
相关代理商/技术参数
参数描述
M50FW080K1G 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K1TG 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K5 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K5G 功能描述:闪存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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