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参数资料
| 型号： | M54531P |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.4 A, 40 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | 16P4, 16 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 68K |
| 代理商： | M54531P |
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54531P and M54531FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide input voltage range (VI = –40 to +40V)
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54531P and M54531FP each have seven circuits con-
sisting of NPN Darlington transistors. A serial circuit includ-
ing a diode and resistance of 20k
is provided between in-
put transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 9). The output transistor emitters are all con-
nected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54531FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
–0.5 ~ +40
400
–40 ~ +40
400
40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
20K
2K
20K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
1
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT
相关PDF资料 |
PDF描述 |
|---|---|
| M54531FP | 400 mA, 40 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M54667P | 500 mA, 8 CHANNEL, Si, SMALL SIGNAL TRANSISTOR |
| M63802GP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63802KP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63802P | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M54531P_99 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54531WP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54532FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54532P | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| M54533P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
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