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参数资料
| 型号： | M54531P |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.4 A, 40 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | 16P4, 16 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 68K |
| 代理商： | M54531P |
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
V
A
V
A
—
V
VO
VIL
—
0
9
6
0
40
1
IC
VIH
0
—
400
200
35
mA
V
II
VCE (sat)
40
—
1000
—
1.3
1.0
1.1
2.0
—
1.4
—
3500
—
2.4
1.6
1.8
3.8
–20
2.4
100
—
V
mA
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
ns
—
30
680
—
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
CL
Measured device
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, ZO = 50
VP = 9VP-P
(2) Input-output conditions : RL = 25
, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Parameter
Limits
min
typ
max
Symbol
Unit
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
“L” input voltage
“H” input voltage
IC
≤ 400mA
IC
≤ 200mA
ICEO = 100
A
VI = 9V, IC = 400mA
VI = 6V, IC = 200mA
VI = 18V
VI = 35V
VI = –35V
IF = 400mA
VR = 40V
VCE = 4V, IC = 300mA, Ta = 25
°C
Collector-emitter breakdown voltage
Input reverse current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
V (BR) CEO
IIR
VF
IR
hFE
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
CL = 15pF (note 1)
ton
toff
ton
50%
toff
INPUT
OUTPUT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M54531P_99 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54531WP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54532FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54532P | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| M54533P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
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