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参数资料
| 型号： | M5M5255FP-70XL |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | 262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM |
| 中文描述： | 262,144位（32,768字8位）的CMOS静态RAM |
| 文件页数： | 4/7页 |
| 文件大小： | 64K |
| 代理商： | M5M5255FP-70XL |
MITSUBISHI LSIs
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M5255DP,FP -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
'97.4.7
4
(2) READ CYCLE
(3) WRITE CYCLE
Symbol
Parameter
t
CR
t
a
(A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output disable time after /S
1
high
Output disable time after S
2
low
Output enable time after /S
1
low
Output enable time after S
2
high
Data valid time after address
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Limits
-55LL, XL
t
a
(S
1
)
t
a
(S
2
)
t
dis
(S
1
)
t
dis
(S
2
)
t
en
(S
1
)
t
en
(S
2
)
t
V
(A)
-70LL, XL
Mi
70
AC ELECTRICAL CHARACTERISTICS
(Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted )
(1) MEASUREMENT CONDITIONS
Input pulse level···················V
IH
=2.4V,V
IL
=0.6V
Input rise and fall time··········5ns
Reference level····················V
OH
=V
OL
=1.5V
Output loads·························Fig.1,CL=30pF (-45LL,-45XL )
CL=50pF (-55LL,-55XL )
CL=100pF (-70LL,-70XL )
CL=5pF (for ten,tdis)
Transition is measured ±500mV from steady
state voltage. (for ten,tdis)
Max
55
5
5
10
Min
55
55
55
20
20
Max
45
5
5
10
Min
45
45
45
15
15
Max
-45LL, XL
5
5
10
70
70
70
25
25
Symbol
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Limits
-55LL, XL
Min
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to /W
Chip select 1 setup time
Chip select 2 setup time
Data setup time
Data hold time
Write recovery time
Output disable time from /W low
Output enable time from /W high
Max
Min
70
50
-70LL, XL
-45LL, XL
Min
20
Max
55
40
0
50
50
50
25
0
0
5
15
Max
45
35
0
40
40
40
20
0
0
5
t
CW
t
w
(W)
t
su
(A)
t
su
(A-WH)
t
su
(S
1
)
t
su
(S
2
)
t
su
(D)
t
h
(D)
t
rec
(W)
t
dis
(W)
t
en
(W)
25
0
65
65
65
30
0
0
5
Vcc
DQ
C
L
Fig.1 Output load
1.8k
990
(Including
scope and JIG)
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