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参数资料
| 型号： | M6045C-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 87K |
| 代理商： | M6045C-E3/45 |
New Product
M6035C thru M6060C
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88965
Revision: 19-May-08
2
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035C
M6045C
M6060C
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
M6045C-E3/45
2.068
45
50/tube
Tube
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
0
10
20
30
40
50
60
70
80
025
50
75
100
125
150
175
Case Temperature (°C)
A
v
er
ag
e
F
o
rw
a
rd
C
u
rrent
Resistive or Inductive Load
M6035C ~ M6045C
M6060C
0
5
10
15
20
25
0
5
10
15
20
25
30
35
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
0
50
100
150
200
250
300
350
400
1
10
100
Number of Cycles at 60 Hz
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 125 °C
T
J = 150 °C
T
J = 25 °C
M6035C ~ M6045C
M6060C
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|---|---|
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| M60491EASD | 制造商:MTRONPTI 制造商全称:MTRONPTI 功能描述:14 Pin Dip, 3.3 & 5.0 Volt, HCMOS, Clipped Sinewave Precision TCXO/TCVCXO |
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