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参数资料
| 型号： | M63815KP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 20P2E-A, 20 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 73K |
| 代理商： | M63815KP |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
Collector
current
Ic
(mA)
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
Collector
current
Ic
(mA)
Clamping Diode Characteristics
Forward bias voltage VF (V)
F
orw
ard
bisa
current
I
F
(mA)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
0
0.4
0.8
1.2
1.6
2.0
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
Collector
current
Ic
(mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC
amplification
f
actor
h
FE
100
80
60
40
20
0
0.05
0.10
0.15
0.20
100
101
102
101
102
103
23
5 7
2 3 5 7
2
3
5
7
2
3
5
7
103
23
5 7
II = 2mA
Ta = –40
°C
Ta = 25
°C
Ta = 85
°C
Ta = 25
°C
VCE 10V
02
4
6
8
12
10
VCE = 4V
Ta = –40
°C
04
8
12
16
20
VCE = 4V
Ta = 85
°C
Ta = –40
°C
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
Ta = 25
°C
Ta = 85
°C
Ta = 25
°C
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相关代理商/技术参数 |
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|---|---|
| M63815P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63816P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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