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参数资料
| 型号： | M63828WP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 16P4X-A, DIP-16 |
| 文件页数： | 1/6页 |
| 文件大小： | 70K |
| 代理商： | M63828WP |
Feb. 2003
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63828WP and M63828DP are seven-circuit Darlington
transistor arrays with clamping diodes. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
Two package configurations (WP/DP)
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL, PMOS IC output
Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63828WP and M63828DP each have seven circuits
consisting of NPN Darlington transistors. These ICs have re-
sistance of 10.5k
between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(WP)/1.00(DP)
–40 ~ +85
–55 ~ +125
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
7.2K
3K
10.5K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
1
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4X-A(WP)
Package type 16P2X-B(DP)
INPUT
OUTPUT
Taiwan A’ssy product
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M63830FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63830P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63832GP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY |
| M63832KP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY |
| M63834FP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY |
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