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参数资料
| 型号： | M63828WP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, 16P4X-A, DIP-16 |
| 文件页数： | 2/6页 |
| 文件大小： | 70K |
| 代理商： | M63828WP |
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V
VO
VIH
VIL
—
0
5
0
50
25
0.8
IC
0
—
400
200
mA
V
A
—
ICEO = 100
A
II = 500
A, IC = 350mA
II = 350
A, IC = 200mA
II = 250
A, IC = 100mA
VI = 10V
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
II
VCE (sat)
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
50
—
1000
—
1.2
1.0
0.9
1.4
—
3000
—
1.6
1.3
1.1
1.5
2.0
100
—
V
mA
ns
—
30
450
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
CL
Measured device
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, ZO = 50
VI = 8V
(2) Input-output conditions : RL = 25
, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
ton
50%
toff
INPUT
OUTPUT
Limits
min
typ
max
Unit
Parameter
Symbol
Duty Cycle
WP : no more than 8%
DP : no more than 5%
Duty Cycle
WP : no more thn 30%
DP : no more than 20%
“L” input voltage
“H” input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Output voltage
IC
≤ 400mA
Collector-emitter breakdown voltage
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V (BR) CEO
VF
IR
hFE
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
Taiwan A’ssy product
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