参数资料
型号: M68AW256ML70ZB1E
厂商: 意法半导体
英文描述: 4 Mbit (256K x16) 3.0V Asynchronous SRAM
中文描述: 4兆位(256K × 16)3.0V异步SRAM
文件页数: 9/23页
文件大小: 152K
代理商: M68AW256ML70ZB1E
9/23
M68AW256M
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assermbly), the ST ECOPACK
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
3. Not exceeding 250°C for more than 30s, and peaking at 260°C.
4. Up to a maximum operating V
CC
of 3.6V only.
Symbol
Parameter
Value
Unit
I
O (1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
T
LEAD
Lead Temperature during Soldering
(2)
260
(3)
°C
V
CC
Supply Voltage
–0.5 to 4.6
V
V
IO (4)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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M68AW256ML70ZB1F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML70ZB1T 制造商:STMicroelectronics 功能描述:
M68AW256ML70ZB6 功能描述:IC SRAM 4MBIT 70NS 48TFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
M68AW256ML70ZB6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML70ZB6F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM