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参数资料
| 型号： | M68AW256MN55ZB1F |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（256K × 16）3.0V异步SRAM |
| 文件页数： | 10/23页 |
| 文件大小： | 152K |
| 代理商： | M68AW256MN55ZB1F |
M68AW256M
10/23
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Parameter
M68AW256M
V
CC
Supply Voltage
2.7 to 3.6V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
30pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI05831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI05832
VCC
OUT
CL includes probe and 1 TTLcapacitance
DEVICE
UNDER
TEST
CL
R1
R2
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相关代理商/技术参数 |
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|---|---|
| M68AW256MN55ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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