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参数资料
| 型号： | M6MGD137W34DWG |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| 中文描述： | 134217728位（8388608字由16位）的CMOS闪存 |
| 文件页数： | 2/3页 |
| 文件大小： | 130K |
| 代理商： | M6MGD137W34DWG |
Rev.1.2_48a_bezc
2
M6MGD137W34DWG
RENESAS
CONFIDENTIAL
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Renesas LSIs
Capacitance
MCP Block Diagram
Min.
Typ.
Max.
COUT
Output
Capacitance
DQ15-DQ0, F-RY/BY#
34
pF
Symbol
Conditions
Ta=25°C, f=1MHz,
Vin=Vout=0V
CIN
Unit
Limits
Parameter
Input
capacitance
F-A21-A0, F-OE#, F-WE#, F-CE1#,
F-CE2#, F-WP#, F-RP#, M-OE#,
M-WE#, M-CE#, M-LB#, M-UB#
26
pF
A0 to F-A21
F-WP#
F-RP#
F-WE#
M-WE#
M-OE#
M-UB#
M-LB#
M-CE#
DQ0 to DQ15
128Mbit DINOR IV
Flash Memory
32Mbit
Mobile RAM
FM-Vcc GND
F-CE1#
F-CE2#
A0 to A20
F-OE#
A0 to F-A21
F-RY/BY#
Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#=“L” and upper 64Mbit is done
by F-CE2#=“L”. Never select each chip at the same time.
In the data sheet there are “VCC”s which mean “FM-VCC” (Common Vcc for Flash / Mobile RAM).
In the Flash Memory part they mean A21, OE# and WE# are F-A21, F-OE# and F-WE#.
In the Mobile RAM part UB# , LB#, OE# and WE# are M-UB# , M-LB#, M-OE# and M-WE#, respectively.
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGD13TW34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M7010R-066ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| M7010R-083ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| M7010R | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGT160S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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