| 型号 | 厂商 | 描述 |
| m68aw512dl70zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dl70zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dn55zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dn55zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dn70zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dn70zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512dzb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 512K x16 3.0V Asynchronous SRAM |
| m68aw512mn70nd1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| m68aw512mn70nd6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| m68hc12a4evb 2 3 4 |
飞思卡尔半导体(中国)有限公司 | Primarily as an Expanded Mode Microcontroller |
| m68hc12b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
飞思卡尔半导体(中国)有限公司 | Microcontrollers |
| m68hc705ugang 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
飞思卡尔半导体(中国)有限公司 | High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit |
| m68tc11e20b56 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
飞思卡尔半导体(中国)有限公司 | HC11 Microcontrollers |
| m68z128w-70n1t 2 3 4 5 6 7 8 9 10 11 12 |
意法半导体 | 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable |
| m68z128wn 2 3 4 5 6 7 8 9 10 11 12 |
意法半导体 | 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable |
| m68z128w 2 3 4 5 6 7 8 9 10 11 12 |
意法半导体 | 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable |
| m69aw024bl60zb8t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| m69aw024bl70zb8t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| m69aw024b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| m69aw048b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| m69aw048bl70zb8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| m6d-50 2 |
DOUBLE-BALANCED MIXER | |
| m6mgb331s4bkt 2 3 |
Renesas Technology Corp. | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| m6mgb331s8akt 2 3 |
Renesas Technology Corp. | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| m6mgb331s8bkt 2 3 |
Renesas Technology Corp. | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| m6mgd137w34dwg 2 3 |
Renesas Technology Corp. | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| m6mgd13tw34dwg 2 3 |
Renesas Technology Corp. | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| m6mgd13tw66cwg-p 2 3 |
Renesas Technology Corp. | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| m7010r-066za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| m7010r-083za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| m7010r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| m7020r-050za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | CAP TANT 22UF 10V 20% POLY SMD |
| m7020r-066za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 32K x 68-bit Entry NETWORK SEARCH ENGINE |
| m7020r-083za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 32K x 68-bit Entry NETWORK SEARCH ENGINE |
| m7020r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 32K x 68-bit Entry NETWORK SEARCH ENGINE |
| m72dw64000b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| m72dw64000b70zt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| m72dw64000b90zt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| m74ac574ttr 2 3 4 5 6 7 8 9 10 11 |
意法半导体 | OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING |
| m74ac574mtr 2 3 4 5 6 7 8 9 10 11 |
意法半导体 | OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING |
| m74act02b 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NOR GATE |
| m74act574b 2 3 4 5 6 7 8 9 10 11 |
意法半导体 | OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING |
| m74hc00 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc00b1r 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc00c1r 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc00m1r 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc00ttr 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc00rm13tr 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NAND GATE |
| m74hc02 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NOR GATE |
| m74hc02b1r 2 3 4 5 6 7 8 |
意法半导体 | QUAD 2-INPUT NOR GATE |