- 您现在的位置：买卖IC网 > PDF目录359091 > M69AW024B (意法半导体) 16 Mbit (1M x16) 3V Asynchronous PSRAM PDF资料下载
参数资料
| 型号： | M69AW024B |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的异步移动存储芯片 |
| 文件页数： | 18/29页 |
| 文件大小： | 429K |
| 代理商： | M69AW024B |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
M69AW024B
18/29
Note: 1. The minimum value must be equal to or greater than the sum of actual t
ELEH
(or t
WLWH
).
2. The new write address is valid from either E1 High or W High.
3. t
AXGL1
is specified from end of t
AVAX
(Min) and is a reference value when access time is determined by t
AXGL1
. If actual value is
lower than specified minimum value, t
AXGL1
is increased by the difference between the actual value and the specified minimum
value.
4. t
AXGL1
maximum is applicable if E1 is kept Low and both W and G are kept High.
5. t
AXGL2
is the absolute minimum value if the Write cycle terminates with W and E1 Low.
6. t
GHEL
(Min) must be kept if the Read cycle is not performed prior to the Write cycle. In case G is disabled after a time t
GHEL
(Min),
W must go Low t
ELEH2
(Min) after E1 goes Low. In other words, the Read cycle is initiated if t
GHEL
(Min) is not kept.
7. Applicable if E1 stays Low after the Read cycle.
8. t
ELEH
or t
WLWH
is applicable if the Write operation is initiated by E1 or W, respectively.
9. If the write operation is terminated by W followed by E1 High, the sum of actual t
ELWL
and t
WLWH
and the sum of actual t
AVWL
and
t
WLWH
must be equal or greater than 60ns.
10. t
EHEL1
or t
WHWL
is applicable if the Write operation is terminated by E1 or W, respectively. If E1 goes High before t
WHWL
(Min), then
t
EHEL1
(Min) must apply.
11. t
EHEL1
and t
EHEL2
is applicable if write operation is terminated by E1 and W, respectively. In case E1 is brought to High before sat-
isfaction of t
EHEL2
(min), the t
EHEL1
(min) is also applied.
12. For other timings please refer to
Table 7., Read and Standby Modes AC Characteristics
.
t
WLEL
t
WS
Write Enable Low Set-up Time
0
0
ns
t
WLWH(1,8)
t
WP
Write Enable Write Pulse Width
45
50
ns
t
WLWL
t
WC
Write Enable Write Cycle Time
80
90
ns
Symbol
Alt.
Parameter
M69AW024B
Unit
–60
–70
Min
Max
Min
Max
相关PDF资料 |
PDF描述 |
|---|---|
| M69AW048B | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M69AW048BL70ZB8 | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M6D-50 | DOUBLE-BALANCED MIXER |
| M6MGB331S4BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW024BE | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW024BE60ZB1F | 制造商:Micron Technology Inc 功能描述:16MB 3V WIRELESS NOR DEVICE - Tape and Reel |
| M69AW024BE60ZB8F | 功能描述:静态随机存取存储器 16 Mbit 1M x16 3V Async P静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL60ZB8T | 功能描述:静态随机存取存储器 16 MBIT (1M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
发布紧急采购，3分钟左右您将得到回复。