- 您现在的位置：买卖IC网 > PDF目录359091 > M69AW024B (意法半导体) 16 Mbit (1M x16) 3V Asynchronous PSRAM PDF资料下载
参数资料
| 型号： | M69AW024B |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的异步移动存储芯片 |
| 文件页数： | 23/29页 |
| 文件大小： | 429K |
| 代理商： | M69AW024B |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页当前第23页第24页第25页第26页第27页第28页第29页
23/29
M69AW024B
Table 9. Power Down and Power-Up AC Parameters
Note: 1. Some data may be written to any address location if t
EHWH
is less than the minimum required time.
2. The device has to enter and exit Power Down mode after t
CHCL
.
3. The Input Transition Time used in AC measurements is 5ns.
Figure 18. Standby Mode Entry AC Waveforms, After Read or Write
Note: Both t
EHGH
and t
EHWH
define the earliest entry timing for Stand-by mode. If either of timing is not satisfied, it takes the t
AVAX
(min) period
from either the last address transition of A0, A1 and A2, or E1 rising edge.
Symbol
Alt.
Parameter
M69AW024B
Unit
–60
–70
Min
Max
Min
Max
t
CLEL
t
CSP
E2 Low Setup Time for Power Down Entry
10
10
ns
t
ELCH
t
C2LP
E2 Low Hold Time after Power Down Entry
80
90
ns
t
CHEL
t
CHH
E1 High Hold Time following E2 High after Power-
Down Exit (Sleep Mode only)
350
350
μs
t
EHEL
t
CHHP
E1 High Hold Time following E2 High after Power-
Down Exit (not in Sleep Mode)
400
400
μs
t
EHCH1
t
CHS
E1 High Setup Time following E2 High after Power-
Down Exit
10
10
ns
t
EHCH2
t
C2LH
Power-up Time 1
50
50
μs
t
CHCL12
t
CHCL22
t
C2HL
Power-up Time 2
50
50
μs
t
EHGH
t
CHOX
E1 High to G Invalid Time for Standby Entry
10
10
ns
t
EHWH
t
CHWX
E1 High to W Invalid Time for Standby Entry
10
10
ns
t
T
t
T
Input Transition Time
1
25
1
25
ns
AI07741
E1
G
W
tEHGH
tEHWH
Active (Write)
Standby
Active (Read)
Standby
E1
G
W
相关PDF资料 |
PDF描述 |
|---|---|
| M69AW048B | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M69AW048BL70ZB8 | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M6D-50 | DOUBLE-BALANCED MIXER |
| M6MGB331S4BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW024BE | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW024BE60ZB1F | 制造商:Micron Technology Inc 功能描述:16MB 3V WIRELESS NOR DEVICE - Tape and Reel |
| M69AW024BE60ZB8F | 功能描述:静态随机存取存储器 16 Mbit 1M x16 3V Async P静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL60ZB8T | 功能描述:静态随机存取存储器 16 MBIT (1M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
发布紧急采购，3分钟左右您将得到回复。