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参数资料
| 型号： | M6MGB331S4BKT |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| 中文描述： | 33554432位（2,097,152 -文字由16位/ 4194304 - Word的8位）的CMOS 3.3只快闪记忆体 |
| 文件页数： | 1/3页 |
| 文件大小： | 179K |
| 代理商： | M6MGB331S4BKT |
Renesas LSIs
Rev.0.1_48a_beez
1
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM
Stacked -
μ
MCP (micro Multi Chip Package)
M6MGB/T331S4BKT
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
PIN CONFIGURATION (TOP VIEW)
The M6MGB/T331S4BKT is a Stacked micro Multi Chip
Package (S-
μ
MCP) that contents 32M-bit Flash memory and
4M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words,
3.3V-only, and high performance non-volatile memory
fabricated by CMOS technology for the peripheral circuit and
DINOR (Divided bit-line NOR) architecture for the memory cell.
4M-bit SRAM is a 524,288 bytes / 262,144 words
asynchronous SRAM fabricated by silicon-gate CMOS
technology.
M6MGB/T331S4BKT is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight.
M6MGB/T331S4BKT provides for Software Lock Release
function. Usually, all memory blocks are locked and can not
be programmed or erased, when F-WP# is low. Using
Software Lock Release function, program or erase operation
can be executed.
Features
Access Time
Flash
70ns (Max.)
SRAM
70ns (Max.)
Supply Voltage
VCC=2.7 ~ 3.0V
Ambient Temperature
Ta=-40 ~ 85
°
C
Package
52pin TSOP(Type-II),
Lead pitch 0.4mm
Outer-lead finishing:Sn-Cu
Application
Mobile communication products
Outline 52PTJ-A
Description
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33
32
31
30
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27
A15
A14
A13
A12
A11
A10
A9
A8
A19
S-CE1#
WE#
F-RP#
F-WP#
S-VCC
S-CE2
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
BYTE#
GND
S-LB#
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
F-VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
F-CE#
A0
10.49 mm
A16
M6MGB/T331S4BKT
DU
1
F-VCC
S-VCC
GND
A-1-A17
A18-A20
DQ0-DQ15
F-CE#
S-CE#,S-CE2
OE#
WE#
:Vcc for Flash
:Vcc for SRAM
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
:Data I/O
:Flash Chip Enable
:SRAM Chip Enable
:Flash/SRAM Output Enable
:Flash/SRAM Write Enable
F-WP#
F-RP#
F-RY/BY#
BYTE#
S-LB#
S-UB#
DU
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready/Busy
:Flash/SRAM Byte Enable
:SRAM Lower Byte
:SRAM Upper Byte
:Do not use
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGB331S8AKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
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