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参数资料
| 型号： | M6MGB331S4BKT |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| 中文描述： | 33554432位（2,097,152 -文字由16位/ 4194304 - Word的8位）的CMOS 3.3只快闪记忆体 |
| 文件页数： | 2/3页 |
| 文件大小： | 179K |
| 代理商： | M6MGB331S4BKT |
Renesas LSIs
Rev.0.1_48a_beez
2
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM
Stacked -
μ
MCP (micro Multi Chip Package)
M6MGB/T331S4BKT
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
Capacitance
MCP Block Diagram
Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and
Upper Byte data(DQ8 to DQ15) are High-Z.
Note 2): In the flash memory part there are
“
VCC
”
s which mean
“
F-VCC
”
.
In the SRAM part there are
“
UB#
”
and
“
LB#
”
which mean
“
S-UB#
”
and
“
S-UB#
”
, respectively.
Note 3):
“
DU(Don
’
t Use)
”
pin must be OPEN ,otherwise be inputted within 0V ~ Vcc.
A0 to A20
F-CE#
A0 to A20
F-WP#
F-RP#
BYTE#
WE#
OE#
S-UB#
S-LB#
S-CE1#
S-CE2
DQ0 to DQ15
32Mbit DINOR
Flash Memory
F-Vcc
GND
4Mbit
SRAM
S-Vcc
A0 to A17
1)
1)
1)
1)
Min.
Typ.
Max.
CIN
Input
capacitance
Output
Capacitance
A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#,
S-CE1#, S-CE2, BYTE#, S-LB#, S-UB#
18
pF
COUT
DQ15-DQ0
22
pF
Symbol
Conditions
Ta=25
°
C,
f=1MHz,
Vin=Vout=0V
Unit
Limits
Parameter
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGB331S8AKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
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