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参数资料
| 型号： | M69AW048BL70ZB8 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| 中文描述： | 32兆位（200万× 16）3V的异步移动存储芯片 |
| 文件页数： | 4/29页 |
| 文件大小： | 433K |
| 代理商： | M69AW048BL70ZB8 |
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M69AW048B
4/29
SUMMARY DESCRIPTION
The M69AW048B is a 32 Mbit (33,554,432 bit)
CMOS memory, organized as 2,097,152 words by
16 bits, and is supplied by a single 2.7V to 3.3V
supply voltage range.
M69AW048B is a member of STMicroelectronics
PSRAM memory family. These devices are manu-
factured using dynamic random access memory
cells, to minimize the cell size, and maximize the
amount of memory that can be implemented in a
given area.
However, through the use of internal control logic,
the device is fully static in its operation, requiring
no external clocks or timing strobes, and has a
standard Asynchronous SRAM Interface.
The internal control logic of the M69AW048B han-
dles the periodic refresh cycle, automatically, and
without user involvement.
Write cycles can be performed on a single byte by
using Upper Byte Enable (UB) and Lower Byte En-
able (LB).
The device can be put into standby mode using
Chip Enable (E1) or in Power-Down mode by us-
ing Chip Enable (E2).
The device features various kinds of Power-Down
modes for power saving as a user configurable op-
tion:
The Partial Array Refresh (PAR) performs a
limited refresh of the part of the PSRAM array
(4 Mbits, 8 Mbits, 16Mbits) that contains
essential data.
Deep Power-Down mode: this mode achieves
a very low current consumption by halting all
the internal activities. Since the refresh
circuitry is halted, the duration of the power-
down should be less than the maximum period
for refresh.
■
■
Figure 2. Logic Diagram
Table 1. Signal Names
AI05844c
21
A0-A20
W
DQ0-DQ15
VCC
M69AW048B
G
16
E1
UB
LB
VSS
E2
A0-A20
Address Input
DQ0-DQ15
Data Input/Output
E1, E2
Chip Enable, Power Down
G
Output Enable
W
Write Enable
UB
Upper Byte Enable
LB
Lower Byte Enable
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected
(no internal connection)
相关PDF资料 |
PDF描述 |
|---|---|
| M6D-50 | DOUBLE-BALANCED MIXER |
| M6MGB331S4BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW048BL70ZB8T | 功能描述:静态随机存取存储器 32 MBIT (2M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69KB096AA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
| M69KB096AA70CW8 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
| M69KB096AA85AW8 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
| M69KB096AB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM |
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