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参数资料
| 型号： | M69AW048BL70ZB8 |
| 厂商： | 意法半导体 |
| 英文描述： | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| 中文描述： | 32兆位（200万× 16）3V的异步移动存储芯片 |
| 文件页数： | 13/29页 |
| 文件大小： | 433K |
| 代理商： | M69AW048BL70ZB8 |
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M69AW048B
Table 9. Capacitance
Table 10. DC Characteristics
Note: 1. Maximum DC voltage on input and I/O pins is V
CC
+ 0.2V.
During voltage transitions, input may positive overshoot to V
CC
+ 1.0V for a period of up to 5ns.
2. Minimum DC voltage on input or I/O pins is –0.3V.
During voltage transitions, input may positive overshoot to V
SS
+ 1.0V for a period of up to 5ns.
Symbol
Parameter
Test
Condition
Min
Max
Unit
C
IN
Input Capacitance on all pins (except DQ)
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Symbol
Parameter
Test Condition
Min
Max
Unit
I
CC1
V
CC
Active Current
V
CC
= 3.3V,
V
IN
= V
IH
or V
IL
,
E1 = V
IL
and E2 = V
IH
,
I
OUT
= 0mA
t
RC
/ t
WC
=
minimum
30
mA
I
CC2
t
RC
/ t
WC
=
1 μs
3
mA
I
CC3
V
CC
Page Read Current
V
CC
= 3.3V,
V
IN
= V
IH
or V
IL
,
E1 = V
IL
and E2 = V
IH
,
I
OUT
= 0mA, t
PRC
= min.
10
mA
I
CCPD
V
CC
Power Down Current
V
CC
= 3.3V,
V
IN
= V
IH
or V
IL
,
E2
≤
0.2V
Deep
Power-
Down
10
μA
I
CCP4
4 Mb PAR
40
μA
I
CCP8
8 Mb PAR
50
μA
I
CCP16
16 Mb PAR
65
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
–1
1
μA
I
SB
Standby Supply Current CMOS
V
CC
= 3.3V,
V
IN
≤
0.2V or V
IN
≥
V
CC
–0.2V,
E1 = E2
≥
V
CC
–0.2V
100
μA
V
IH (1)
Input High Voltage
0.8V
CC
V
CC
+ 0.2
V
V
IL (2)
Input Low Voltage
–0.3
0.2V
CC
V
V
OH
Output High Voltage
V
CC
= 2.7V, I
OH
= –0.5mA
2.4
V
V
OL
Output Low Voltage
I
OL
= 1mA
0.4
V
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