参数资料
型号: M68AW512MN70ND1T
厂商: 意法半导体
英文描述: 8 Mbit (512K x16) 3.0V Asynchronous SRAM
中文描述: 8兆位(为512k × 16)3.0V异步SRAM
文件页数: 17/19页
文件大小: 296K
代理商: M68AW512MN70ND1T
17/19
M68AW512M
PART NUMBERING
Table 11. Ordering Information Scheme
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the STMicroelectronics Sales Office nearest to you.
Example:
M68AW512
M
L
55 ND
6
T
Device Type
M68
Mode
A = Asynchronous
Operating Voltage
W = 2.7 to 3.6V
Array Organization
512 = 8 Mbit (512K x16)
Option 1
M = 1 Chip Enable; Write and Standby from UB and LB
Option 2
L = L-Die
N = N-Die
Speed Class
55 = 55 ns
70 = 70 ns
Package
ND = TSOP 44 Type II
Operating Temperature
1 = 0 to 70 °C
6 = –40 to 85 °C
Shipping
T = Tape & Reel Packing
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