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参数资料
| 型号： | M68AW512MN70ND1T |
| 厂商： | 意法半导体 |
| 英文描述： | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 8兆位（为512k × 16）3.0V异步SRAM |
| 文件页数： | 18/19页 |
| 文件大小： | 296K |
| 代理商： | M68AW512MN70ND1T |
M68AW512M
18/19
REVISION HISTORY
Table 12. Document Revision History
Date
Version
Revision Details
January 2002
-01
First Issue
15-Mar-2002
-02
Document status moved to Datasheet
Tables 3, 2, 7, 8 and 9 clarified
17-Jun-2002
-03
I
SB
clarified (Table 6)
I
CCDR
, V
DR
clarified (Table 9)
03-Oct-2002
3.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 03 equals 3.0).
New part number added.
09-Oct-2002
3.2
Commercial code modified.
27-Sep-2004
4.0
t
PD
and t
PU
modified in
Table 7., Read and Standby Mode AC Characteristics
.
Document structure updated without modifications of the content.
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相关代理商/技术参数 |
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| M68AW512MN70ND6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
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