型号: | M6MGD13TW34DWG |
厂商: | Renesas Technology Corp. |
英文描述: | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
中文描述: | 134217728位(8388608字由16位)的CMOS闪存 |
文件页数: | 2/3页 |
文件大小: | 130K |
代理商: | M6MGD13TW34DWG |
相关PDF资料 |
PDF描述 |
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M6MGD13TW66CWG-P | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
M7010R-066ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
M7010R-083ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
M7010R | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
M7020R-050ZA1T | CAP TANT 22UF 10V 20% POLY SMD |
相关代理商/技术参数 |
参数描述 |
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M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
M6MGT160S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |