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参数资料
| 型号： | M6MGD13TW34DWG |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| 中文描述： | 134217728位（8388608字由16位）的CMOS闪存 |
| 文件页数： | 3/3页 |
| 文件大小： | 130K |
| 代理商： | M6MGD13TW34DWG |
M6MGD13TW34DWG
RENESAS LSIs
Rev.1.0.48a_bezc
3
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
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New publication, effective Sep.2003.
Specifications subject to change without notice
相关PDF资料 |
PDF描述 |
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| M6MGD13TW66CWG-P | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M7010R-066ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
| M7010R-083ZA1T | 16K x 68-bit Entry NETWORK SEARCH ENGINE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGT160S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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