参数资料
型号: M69AW024BL70ZB8T
厂商: 意法半导体
英文描述: 16 Mbit (1M x16) 3V Asynchronous PSRAM
中文描述: 16兆位(1米× 16)3V的异步移动存储芯片
文件页数: 11/29页
文件大小: 429K
代理商: M69AW024BL70ZB8T
11/29
M69AW024B
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 4., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Note: 1. All voltages are referenced to V
SS
.
2. The Input Transition Time used in AC measurements is 5ns. For other input transition times, see
Table 9.
Figure 5. AC Measurement Load Circuit
Figure 6. AC Measurement I/O Waveform
Parameter
M69AW024B
Unit
–60, –70
Min
Max
V
CC
Supply Voltage
1
2.7
3.3
V
Ambient Operating Temperature
–30
85
°C
Load Capacitance (C
L
)
50
pF
Output Circuit Protection Resistance (R
1
)
50
Input Rise and Fall Times
4
ns
Input Pulse Voltages
0 to V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
V
Input Transition Time
2
(t
τ
) between V
IL
and V
IH
5
ns
AI07222c
VCC/2
OUT
CL includes JIG capacitance
DEVICE
UNDER
TEST
CL
R1
AI07753
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
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