参数资料
型号: M68AW512DL70ZB1T
厂商: 意法半导体
英文描述: 8 Mbit 512K x16 3.0V Asynchronous SRAM
中文描述: 8兆位为512k x16 3.0V异步SRAM
文件页数: 8/19页
文件大小: 296K
代理商: M68AW512DL70ZB1T
M68AW512M
8/19
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Parameter
M68AW512M
V
CC
Supply Voltage
2.7 to 3.6V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
30pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI05831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI05832
VCC
OUT
CL includes probe and 1 TTLcapacitance
DEVICE
UNDER
TEST
CL
R1
R2
相关PDF资料
PDF描述
M68AW512DL70ZB6T 8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN55ZB1T 8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN55ZB6T 8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN70ZB1T 8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN70ZB6T 8 Mbit 512K x16 3.0V Asynchronous SRAM
相关代理商/技术参数
参数描述
M68AW512DL70ZB6T 制造商:STMicroelectronics 功能描述:
M68AW512DN55ZB1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN55ZB6 制造商:STMicroelectronics 功能描述:
M68AW512DN55ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 512K x16 3.0V Asynchronous SRAM
M68AW512DN70ZB1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit 512K x16 3.0V Asynchronous SRAM