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参数资料
| 型号： | M72DW64000B70ZT |
| 厂商： | 意法半导体 |
| 英文描述： | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| 中文描述： | 64兆比特（x8 / x16插槽，多银行，引导块）和16Mbit的闪存伪静态存储器，3V电源，多记忆体产品 |
| 文件页数： | 4/19页 |
| 文件大小： | 102K |
| 代理商： | M72DW64000B70ZT |
M72DW64000B
4/19
SUMMARY DESCRIPTION
The M72DW64000B is a low voltage Multiple
Memory Product which combines two memory de-
vices; a 64 Mbit Multiple Bank, Boot Block Flash
memory (M29DW640D) and a 16 Mbit Pseudo
SRAM. This document should be read in conjunc-
tion with the M29DW640D and M69AW024B
datasheets.
Recommended operating conditions do not allow
more than one of the internal memory devices to
be active at the same time.
The memory is offered in an LFBGA73
(8 x 11.6mm, 0.8 mm pitch)
package and is sup-
plied with all the bits erased (set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI08527
22
A0-A21
V
CCF
M72DW64000B
G
V
SS
W
RP
F
E1
P
E2
P
UB
P
LB
P
V
PP
/WP
V
CCP
DQ0-DQ14
15
DQ15A–1
RB
BYTE
E
F
A0-A19
Address Inputs common to the Flash
Memory and PSRAM Components
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
G
Output Enable Input
W
Write Enable Input
V
CCF
Flash Memory Power Supply
V
PP
/WP
V
PP
/Write Protect
V
SS
Ground
V
CCP
PSRAM Power Supply
NC
Not Connected Internally
Flash Memory Control Functions
A20-A21
Address Inputs
E
F
Flash-1 Chip Enable Input
RP
F
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
PSRAM Control Functions
E1
P
, E2
P
Chip Enable Inputs
UB
P
Upper Byte Enable Input
LB
P
Lower Byte Enable Input
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M72DW64000B90ZT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
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| M7310-GR0E | 制造商:Denon 功能描述:MS731 GRILL |
| M7311 | 制造商:PETERMANN 制造商全称:PETERMANN 功能描述:HIGH RELIABILITY FOR LOW COST |
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