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参数资料
| 型号： | M69AW024BL60ZB8T |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的异步移动存储芯片 |
| 文件页数： | 4/29页 |
| 文件大小： | 429K |
| 代理商： | M69AW024BL60ZB8T |
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M69AW024B
4/29
SUMMARY DESCRIPTION
The M69AW024B is a 16 Mbit (16,777,216 bit)
CMOS memory, organized as 1,048,576 words by
16 bits, and is supplied by a single 2.7V to 3.3V
supply voltage range.
M69AW024B is a member of STMicroelectronics
PSRAM memory family, based on the one-transis-
tor per-cell architecture. These devices are manu-
factured using dynamic random access memory
cells, to minimize the cell size, and maximize the
amount of memory that can be implemented in a
given area.
However, through the use of internal control logic,
the device is fully static in its operation, requiring
no external clocks or timing strobes, and has a
standard Asynchronous SRAM Interface.
The internal control logic of the M69AW024B han-
dles the periodic refresh cycle, automatically, and
without user involvement.
Write cycles can be performed on a single byte by
using Upper Byte Enable (UB) and Lower Byte En-
able (LB).
The device can be put into standby mode using
Chip Enable (E1) or in deep power down mode by
using Chip Enable (E2).
Power-Down mode achieves a very low current
consumption by halting all the internal activities.
Since the refresh circuitry is halted, the duration of
the power-down should be less than the maximum
period for refresh, if the user has not finished with
the data contents of the memory.
Figure 2. Logic Diagram
Table 1. Signal Names
AI07406
20
A0-A19
W
DQ0-DQ15
VCC
M69AW024B
G
16
E1
UB
LB
VSS
E2
A0-A19
Address Input
DQ0-DQ15
Data Input/Output
E1, E2
Chip Enable, Power Down
G
Output Enable
W
Write Enable
UB
Upper Byte Enable
LB
Lower Byte Enable
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected
(no internal connection)
相关PDF资料 |
PDF描述 |
|---|---|
| M69AW024BL70ZB8T | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW024B | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW048B | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M69AW048BL70ZB8 | 32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M6D-50 | DOUBLE-BALANCED MIXER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW048B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M69AW048BL70ZB8 | 制造商:STMicroelectronics 功能描述: |
| M69AW048BL70ZB8T | 功能描述:静态随机存取存储器 32 MBIT (2M X16) 3V Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M69KB096AA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
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