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| 型号： | M72DW64000B90ZT |
| 厂商： | 意法半导体 |
| 英文描述： | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| 中文描述： | 64兆比特（x8 / x16插槽，多银行，引导块）和16Mbit的闪存伪静态存储器，3V电源，多记忆体产品 |
| 文件页数： | 13/19页 |
| 文件大小： | 102K |
| 代理商： | M72DW64000B90ZT |
13/19
M72DW64000B
Table 6. Flash DC Characteristics
Note: 1. Sampled only, not 100% tested.
2. In Dual operations the Supply Current will be the sum of
I
CC1
(read) and
I
CC3
(program/erase).
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μ
A
I
CC1(2)
Supply Current (Read)
E
F
= V
IL
, G = V
IH
,
f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E
F
= V
CC
±0.2V,
RP
F
= V
CC
±0.2V
100
μ
A
I
CC3
(1,2)
Supply Current (Program/
Erase)
Program/Erase
Controller active
V
PP
/WP =
V
IL
or V
IH
20
mA
V
PP
/WP = V
PP
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.3
V
V
PP
Voltage for
V
PP
/WP
Program
Acceleration
V
CC
= 3.0V ±10%
11.5
12.5
V
I
PP
Current for
V
PP
/WP
Program
Acceleration
V
CC
= 3.0V ±10%
15
mA
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.4
V
V
ID
Identification Voltage
11.5
12.5
V
V
LKO
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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