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参数资料
| 型号： | M72DW64000B |
| 厂商： | 意法半导体 |
| 英文描述： | 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product |
| 中文描述： | 64兆比特（x8 / x16插槽，多银行，引导块）和16Mbit的闪存伪静态存储器，3V电源，多记忆体产品 |
| 文件页数： | 1/19页 |
| 文件大小： | 102K |
| 代理商： | M72DW64000B |
1/19
PRELIMINARY DATA
October 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M72DW64000B
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
FEATURES SUMMARY
■
MULTIPLE MEMORY PRODUCT
– 64Mbit (8M x8 or 4M x16), Multiple Bank, Page,
Boot Block, Flash Memory
– 16Mbit (1M x 16) Pseudo Static RAM
■
SUPPLY VOLTAGE
– V
CCF
= V
CCP
= 2.7 to 3.3V
– V
PPF
= 12V for Fast Program (optional)
■
ACCESS TIME: 70, 90ns
■
LOW POWER CONSUMPTION
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201h
FLASH MEMORY
■
ASYNCHRONOUS PAGE READ MODE
– Page Width: 4 Words
– Page Access: 25, 30ns
■
PROGRAMMING TIME
– 10μs per Byte/Word typical
– 4 Words/ 8 Bytes at-a-time Program
■
MEMORY BLOCKS
– Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
– Parameter Blocks (at both Top and Bottom)
■
DUAL OPERATIONS
– While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
■
PROGRAM/ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
Figure 1. Package
■
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
■
TEMPORARY BLOCK UNPROTECTION
MODE
■
COMMON FLASH INTERFACE
– 64 bit Security Code
■
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■
ACCESS TIME: 70ns
■
DEEP POWER DOWN CURRENT: 10μA
■
LOW V
CC
DATA RETENTION: 2.3V
■
LOW STANDBY CURRENT: 70μA
FBGA
LFBGA73 (ZA)
8 x 11.6mm
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